View IKW25N120T2_4944103.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop(R) with soft, fast recovery anti-parallel EmCon diode
C
* *
Short circuit withstand time - 10s Designed for : - Frequency Converters - Uninterrupted Power Supply * TrenchStop(R) 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior * Easy paralleling capability due to positive temperature coefficient in VCE(sat) * Low EMI * Low Gate Charge * Very soft, fast recovery anti-parallel EmCon HE diode * Qualified according to JEDEC1 for target applications * Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKW25N120T2 VCE 1200V IC 25A VCE(sat),Tj=25C 1.7V Tj,max 175C Marking Code K25T1202 Package PG-TO-247-3
G
E
PG-TO-247-3
Maximum Ratings Parameter Collector-emitter voltage DC collector current (Tj=150C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj=150C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Wavesoldering only, temperature on leads only
1
Symbol VCE IC
Value 1200 50 25
Unit V A
ICpuls IF
100 100
40 25 IFpuls VGE
2)
100 20 10 349 -40...+175 -55...+150 260 V s W C
tSC Ptot Tj Tstg -
VGE = 15V, VCC 600V, Tj, start 175C
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.1 Sep 08
Power Semiconductors
TrenchStop 2
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJA RthJCD RthJC Symbol
(R)
nd
IKW25N120T2
generation Series
Conditions
Max. Value 0.43 0.81 40
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V(BR)CES VGE=0V, IC=500A VCE(sat) V G E = 15 V, I C =25A T j = 25C T j = 150 C T j = 175 C Diode forward voltage VF VGE=0V, IF=25A T j = 25C T j = 150 C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =1.0mA,V C E =V G E V C E = 12 00 V, VGE=0V T j = 25C
Tj=150C
Symbol
Conditions
Value min. 1200 5.2 typ. 1.7 2.1 2.2 1.65 1.7 1.65 5.8 max. 2.2 2.2 6.4
Unit
V
mA 13.5 0.4 4.0 20 200 nA S
T j = 175 C Gate-emitter leakage current Transconductance IGES gfs V C E = 0 V , V G E =20V V C E =20V, I C =25A
Power Semiconductors
2
Rev. 2.1
Sep 08
TrenchStop 2
Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) Ciss Coss Crss QGate LE V C E =25V, VGE=0V, f=1MHz
(R)
nd
IKW25N120T2
generation Series
-
1600 155 90 120 13
-
pF
V C C = 96 0 V, I C =40A V G E =15V
nC nH A
V G E =15V,t S C 1 0 s V C C = 600 V, T j , s t a r t = 2 5C T j , s t a r t = 1 75 C
150 115
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 25C , V R = 60 0 V , I F =25A, d i F /d t= 1050 A/s 195 2.05 20 475 ns C A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 60 0 V, I C =25A, V G E = 0 /1 5 V, R G = 1 6 .4 , L 2 ) =1 05nH, C 2 ) =39pF Energy losses include "tail" and diode reverse recovery. 27 20 265 95 1.55 1.35 2.9 mJ ns Symbol Conditions Value min. typ. max. Unit
1) 2)
Allowed number of short circuits: <1000; time between short circuits: >1s. Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.1 Sep 08
Power Semiconductors
TrenchStop 2
Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm dirr/dt T j = 175 C td(on) tr td(off) tf Eon Eoff Ets Symbol
(R)
nd
IKW25N120T2
generation Series
Conditions
Value min. typ. 25 24 340 164 2.25 2.05 4.3 290 3.65 24 330 max. -
Unit
T j = 175 C V C C = 60 0 V, I C =25A, V G E = 0 /1 5 V, R G = 1 6 .4 , L 1 ) =1 75nH, C 1 ) =67pF Energy losses include "tail" and diode reverse recovery.
ns
mJ
ns C A A/s
V R = 60 0 V , I F =25A, d i F /d t= 1000 A/s
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 4 Rev. 2.1 Sep 08
Power Semiconductors
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
100A
100A TC=80C
tp=3s 10s
IC, COLLECTOR CURRENT
TC=110C
IC, COLLECTOR CURRENT
80A
10A 50s 150s 1A 500s
60A
40A
Ic
20A
Ic
0.1A 1V
20ms DC
0A 10Hz
100Hz
1kHz
10kHz
100kHz
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 600V, VGE = 0/+15V, RG = 12)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C;VGE=15V)
350W 300W 250W 200W 150W 100W 50W 0W 25C
50A
IC, COLLECTOR CURRENT
POWER DISSIPATION
40A
30A
20A
Ptot,
10A
50C
75C
100C
125C
150C
0A 25C
75C
125C
TC, CASE TEMPERATURE Figure 3. Maximum power dissipation as a function of case temperature (Tj 175C)
TC, CASE TEMPERATURE Figure 4. Maximum collector current as a function of case temperature (VGE 15V, Tj 175C)
Power Semiconductors
5
Rev. 2.1
Sep 08
TrenchStop 2
100A
(R)
nd
IKW25N120T2
generation Series
100A
80A
20V
80A
20V VGE=17V 15V
IC, COLLECTOR CURRENT
15V 60A 13V 11V 40A 9V 7V
IC, COLLECTOR CURRENT
VGE=17V
60A
13V 11V
40A
9V 7V
20A
20A
0A 0V 1V 2V 3V 4V
0A 0V 1V 2V 3V 4V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C)
80A 70A
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
3.5V 3.0V 2.5V 2.0V 1.5V IC=12.5A 1.0V 0.5V 0.0V 0C 50C 100C 150C IC= 3A IC=50A
IC, COLLECTOR CURRENT
60A 50A 40A 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V TJ=175C 25C
IC=25A
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V)
TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
Power Semiconductors
6
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
1000ns
td(off)
1000 ns
t, SWITCHING TIMES
100ns
tf
t, SWITCHING TIMES
td(off)
100 ns
tf
td(on)
10ns tr 10A 20A 30A 40A
td(on) tr
15 25 35 45 55 65 75
10 ns
5
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=16.4, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E)
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
6.5V 6.0V 5.5V 5.0V min. 4.5V 4.0V 3.5V max. typ.
t, SWITCHING TIMES
100ns tf
td(on) tr 10ns
0C
50C
100C
150C
0C
50C
100C
150C
TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=16.4, Dynamic test circuit in Figure E)
TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 1.0mA)
Power Semiconductors
7
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
*) Eon and Ets include losses due to diode recovery
*) Eon and Etsinclude losses due to diode recovery
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
Ets* 10.0mJ
7.5 mJ
Eon* 5.0mJ Eoff
5.0 mJ
Eon* Eoff
2.5 mJ
0.0mJ 10A 20A 30A 40A
0.0 mJ
5
15
25
35
45
55
65
75
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175C, VCE=600V, VGE=0/15V, RG=16.4, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175C, VCE=600V, VGE=0/15V, IC=25A, Dynamic test circuit in Figure E)
*) E on and E ts include losses due to diode recovery
*) Eon and Ets include losses due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
4mJ
E ts*
5.0mJ
3mJ E on* 2mJ E off 1mJ
Ets* 2.5mJ Eoff Eon*
0mJ
0C
50C
100C
150C
0.0mJ 400V
500V
600V
700V
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=600V, VGE=0/15V, IC=25A, RG=16.4, Dynamic test circuit in Figure E)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ=175C, VGE=0/15V, IC=25A, RG=16.4, Dynamic test circuit in Figure E)
Power Semiconductors
8
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
15V
Ciss
240V 960V
VGE, GATE-EMITTER VOLTAGE
1nF
10V
c, CAPACITANCE
Coss 100pF Crss
5V
0V
0nC
50nC
100nC
10pF
0V
10V
20V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC=25 A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
SHORT CIRCUIT WITHSTAND TIME
15s
IC(sc), short circuit COLLECTOR CURRENT
200A
10s
150A
100A
5s
tSC,
50A
0s
12V
14V
16V
18V
0A
12V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ 175C)
VGE, GATE-EMITTETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE 600V, Tj,start = 175C)
Power Semiconductors
9
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
VCE, COLLECTOR-EMITTER VOLTAGE
VCE
IC, COLLECTOR CURRENT
600V 45A
45A
600V
IC
30A 400V
400V
30A
200V
15A
15A
200V
0V
IC
0us 0.4us 0.8us 1.2us
VCE
0A
0A 0us
0V 0.4us 0.8us 1.2us
t, TIME Figure 21. Typical turn on behavior (VGE=0/15V, RG=16.4, Tj = 175C, Dynamic test circuit in Figure E)
t, TIME Figure 22. Typical turn off behavior (VGE=15/0V, RG=16.4, Tj = 175C, Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5 0.2 0.1 0.05
R,(K/W) 0.083 0.116 0.213 0.014
ZthJC, TRANSIENT THERMAL RESISTANCE
D=0.5
10 K/W
-1
0.2
-1 10 K/W 0.1
, (s)
10 K/W
-2
0.02 0.01 single pulse
2.77*10 -3 3.21*10 -2 1.73*10 -1 2.77*10
R2
-4
0.05
R,(K/W) 0.198 0.301 0.287 0.019
, (s) -4 3.31*10 -3 3.33*10 -2 1.68*10 -1 2.49*10
R2
0.02 R 1 0.01
R1
C single pulse 1 = 1 / R 1 C 2 = 2 / R 2
C1=1/R1
C2=2/R2
10 K/W
-2
10 K/W 10s
-3
100s
1ms
10ms
100ms
10s
100s
1ms
10ms
100ms
tP, PULSE WIDTH Figure 23. IGBT transient thermal resistance (D = tp / T)
tP, PULSE WIDTH Figure 24. Diode transient thermal impedance as a function of pulse width (D=tP/T)
Power Semiconductors
10
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
600ns
TJ=175C
Qrr, REVERSE RECOVERY CHARGE
4C
trr, REVERSE RECOVERY TIME
500ns 400ns
3C
TJ=175C
300ns 200ns 100ns 0ns 400A/s
2C
TJ=25C
1C
TJ=25C
800A/s 1200A/s 1600A/s 2000A/s
0C 400A/s
800A/s
1200A/s 1600A/s 2000A/s
diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
35A
REVERSE RECOVERY CURRENT
TJ=175C
dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
-1200A/s
TJ=25C
30A 25A 20A 15A 10A 5A 0A
TJ=25C
-800A/s
TJ=175C
-400A/s
Irr,
400A/s
800A/s 1200A/s 1600A/s 2000A/s
-0A/s 400A/s
800A/s
1200A/s 1600A/s 2000A/s
diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=600V, IF=25A, Dynamic test circuit in Figure E)
Power Semiconductors
11
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
100A
2.5V
80A TJ=25C 175C
IF=50A
60A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
2.0V 25A 1.5V 12.5A
40A
1.0V
3A
20A
0.5V
0A
0V
1V
2V
3V
0.0V
0C
50C
100C
150C
VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage
TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature
Power Semiconductors
12
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
Power Semiconductors
13
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Power Semiconductors
14
Rev. 2.1
Sep 08
TrenchStop 2
(R)
nd
IKW25N120T2
generation Series
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
15
Rev. 2.1
Sep 08

▲Up To Search▲

Price & Availability of IKW25N120T2

	To Download IKW25N120T2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .